PART |
Description |
Maker |
M12L64322A-7BG |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Mem...
|
A43E06161V-95UF A43E06161 A43E06161V A43E06161V-75 |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
VDS4616A4A-7 VDS4616A4A VDS4616A4A-5 VDS4616A4A-6 |
Synchronous DRAM(512K X 16 Bit X 2 Banks)
|
A-DATA[A-Data Technology]
|
M12L64322A-5BG M12L64322A-5TG M12L64322A-6BG M12L6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
A43E06321 |
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
|
AMICC
|
IC42S16102-6T IC42S16102-7T IC42S16102-7TI |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM 12k × 16位2银行6兆)内存
|
Rohm Co., Ltd. Advanced Interconnections, Corp.
|
HY57V161610ETP-I HY57V161610ETP-5I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 200MHz
|
HYNIX[Hynix Semiconductor]
|
K4R881869 K4R881869M-NCK8 K4R881869M-NBCCG6 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 SDRAM - 16Mb
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM 512K x 4 BANKS x 32 BITS SDRAM From old datasheet system
|
Winbond Electronics WINBOND[Winbond]
|
MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40 IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR 4M (512K X 8) BIT
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|